型号 SPB04N60S5
厂商 Infineon Technologies
描述 MOSFET N-CH 600V 4.5A TO-263
SPB04N60S5 PDF
代理商 SPB04N60S5
产品培训模块 CoolMOS™ CP High Voltage MOSFETs Converters
产品目录绘图 Mosfets TO-263
标准包装 1
系列 CoolMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C 950 毫欧 @ 2.8A,10V
Id 时的 Vgs(th)(最大) 5.5V @ 200µA
闸电荷(Qg) @ Vgs 22.9nC @ 10V
输入电容 (Ciss) @ Vds 580pF @ 25V
功率 - 最大 50W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-3
包装 标准包装
其它名称 SPB04N60S5INDKR
同类型PDF
SPB04N60S5 Infineon Technologies MOSFET N-CH 600V 4.5A TO-263
SPB04N60S5 Infineon Technologies MOSFET N-CH 600V 4.5A TO-263
SPB07N60C3 Infineon Technologies MOSFET N-CH 650V 7.3A D2PAK
SPB07N60S5 Infineon Technologies MOSFET N-CH 600V 7.3A TO-263
SPB07N60S5 Infineon Technologies MOSFET N-CH 600V 7.3A TO-263
SPB07N60S5 Infineon Technologies MOSFET N-CH 600V 7.3A TO-263
SPB08P06P Infineon Technologies MOSFET P-CH 60V 8.8A D2PAK
SPB08P06P G Infineon Technologies MOSFET P-CH 60V 8.8A TO-263
SPB08P06P G Infineon Technologies MOSFET P-CH 60V 8.8A TO-263
SPB08P06P G Infineon Technologies MOSFET P-CH 60V 8.8A TO-263
SPB1 Hammond Manufacturing PANEL SWING KIT
SPB10045E3 Microsemi Power Products Group DIODE SCHOTTKY 45V 100A SOT-227
SPB100N03S2-03 Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S2-03 G Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S203T Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S203T Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S2L-03 Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S2L-03 G Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N03S2L03T Infineon Technologies MOSFET N-CH 30V 100A D2PAK
SPB100N04S2-04 Infineon Technologies MOSFET N-CH 40V 100A D2PAK